=====================FEEDTHUR_ERRORS======================== ___ |VIN| |___| ___ ___|_ |CTL| | _| | |___| TEST SCHEMATIC A19 | |_| | ___|_ _|_____|__| _| | |__________ |_| | | _ | |_____| | |_| | |___|_| ___ |_______|OUT| _|_ |___| ___ _|_ /// When a switch turns off in the case of a sample and hold circuit, the charge in the gate region which forms the channel tends to migrate towards the gate and source region provided the transit time of charge across the gate is small compared to the time it takes for the gate to be pulled down. It has been recommended that the channel length be made minimum to prevent charge being left under the gate when the channel goes away. ON -> Off _|__ VCC =3 ____ 2.6/1 ___ | | ___ | |___| V___________| | VIN VFT_mV |___| | |___| 0 -5 _|_ _|_ .5 -3.8 /VIN\ ___ 1 -2.4 \___/ | 1pf 1.5 -1.14 | | 2 0ff _|_ _|_ /// /// The troubles with "charge conservation models" are well know by the CAD group. The trouble with MOS devices is their channel capacitance is not linear. Other test circuitry has shown that for at least for NMOS devices, the models work well enough to keep the ADC designers marginally happy. First order, the offset introduced to a sample and hold capacitor is a function of overdrive voltage. The simulated results are shown above and they are in the same order of magnitude is experienced in the ADC0831(mask making offset included?) ___ |VIN| __________________________ |___| ___ | ___ | ___ ___|_ |CTL| | _____ |DUM| ___|_ |CTL| | _| | |___| | | _ | |___| | _| | |___| ___|_|_| | ___|_ |___|_|_| | ___|_ | |_| | ___|_ | _|_____|__| _| | | _|_____|__| _| | _|_____|__| _| | | |__________ |_| | | |__________ |_| | |__________ |_| | | | _ | |_____| | | _ | |_____| | _ | |_____| | | |_| | ______|___|_|_| | | |_| | | |___|_| | ___ |_____| |___|_| | |_____|_|OUT| | | _|_ |___| _____________________| | ___ | | _|_ | | /// | |_________________________| This charge injection due to the channel turning off is cancelled by by turning on a "dummy" transistor which is intended to have the exact opposite effect. Because drain and sources may not be proccessed equally, a layout as is shown above may be of use ON -> Off OFF -> ON _|__ _|__ VCC =3 ____ 2.6/1 ____ ___ | | 2X | | ___ | |___| V________|____V___| | VIN VFT_mV VFT2_mv |___| | |___| 0 -9.4 .43 _|_ _|_ 2.6/1 .5 -7.1 .22 /VIN\ ___ 1 -4.7 .05 \___/ | 1pf 1.5 -2.3 .008 | | 2 0ff _|_ _|_ /// /// Another problem with the dummy is if you turn it on at the same time you turn off the channel, some of the cancellation charge may escape through the channel. Add a little delay. And above are the results. VFT_mV is the injected offset after the channel opens. VFT2_mV is the is the injected offset after the dummy turns on. Notice that the cancellation is not perfect. ON -> Off OFF -> ON _|__ _|__ VCC =3 ____ 2.6/1 ____ ___ | | 2X | | ___ | |__/\ _| V________|____V___| | VIN VFT_mV VFT2_mv |___| \/ | | |___| 0 -9.7 .18 _|_ _|_ _|_ 2.6/1 .5 -7.3 .002 /VIN\ 1K ___ ___ 1 -4.8 -.002 \___/ |1pf | 1pf 1.5 -2.2 -.007 | | | 2 0ff _|_ _|_ _|_ /// /// /// As has been described in papers, the channel charge tends to go to the lower impedance. Putting equal size capacitors on each end of the channel and putting a 1k resistor in series greatly improves the cancellation. ON -> Off OFF -> ON _|__ _|__ VCC =3 ____ 2.6/1 ____ ___ | | 2X | | ___ | |__/\ _| V________|____V___| | VIN VFT_mV VFT2_mv |___| \/ | | |___| 0 -2.0 .002 _|_ _|_ _|_ 2.6/1 .5 -1.43 -.001 /VIN\ 1K ___ ___ 1 -.96 -.001 \___/ |5pf | 5pf 1.5 -0.4 .001 | | | 2 0ff _|_ _|_ _|_ /// /// /// With larger caps, the cancellation appears to be near perfect. But again the simulated results need to be taken with a grain of salt. First off, a spice simulator can fail to obey charge conservation in the transient mode even with linear capacitors. Second, how well two MOS devices match is also an important question to which test geometries will be added to the next test die. ON -> Off OFF -> ON _|__ _|__ VCC =3 ____ 2.6/1 ____ ___ | ^ 2X | ^ ___ | |__/\ _| |________|____|___| | VIN VFT_mV VFT2_mv |___| \/ | | |___| 3 none none _|_ _|_ _|_ 2.6/1 2 none none /VIN\ 1K ___ ___ 1 Off \___/ |.5pf | .5pf | | | _|_ _|_ _|_ MODELs have a problem? /// /// /// To wrap things up, the same tests were performed on the PMOS devices and their simulation says they have no feedthru at all. I guess the ADC designer typically use NMOS devices for their critical switching anyway. In conclusion, laying out arrays of both NMOS and PMOS sample and hold switches in both X and Y directions hopefully can provide the answers to the question of how good of a sample and hold can we make. { 12Bit ADC anybody? } 152nA = 171K = 52nV 1.5v -1.219 3v 1.247 1.5/500K = 3uA = 28uV about 10 ohms 1.5 -1.51 3v 1375 1.5/1K = 1.5mA = 135uV about .1 ohms 1.5 -1.112 3v 1313 1.5/10K = 150uA = 201uV about 1.3 ohms 1.5 -1.06 3v 1475 1.5/100 = 15mA = 451uV about 30m ohms 1mV over +/-150mA at 10 ohms is 3mohms current limit 900mA bW = 30k 1000pF Q = 7 stable more s 87kHz 100pf Q = 5 10K load= q=2 open Q = 7 100Khz bw at 10pf q = 2 Vcm R277 R278 R275 R276 Q324 Q323 Q321 Q322 Voffu 0 1000 1000 1000 1000 1 1 1 1 -194.9 2.50 1000 1000 1000 1000 1 1 1 1 -197.6 2.50 1000 1030 1000 1000 1 1 1 1 -100.8 2.50 1000 1100 1000 1000 1 1 1 1 327.8 0 1000 1100 1000 1000 1 1 1 1 320.3 0 1000 1100 1000 1000 1.04 1 1 1 -999.3 0 1000 1000 1000 1000 1.04 1 1 1 -1418.3 0 1000 1400 1000 1000 1.04 1 1 1 36.6 2.5 1000 1400 1000 1000 1.04 1 1 1 109.9 5 1000 1400 1000 1000 1.04 1 1 1 836 5 1000 1400 1000 1000 1.04 1 1 1.04 1672 5 1000 1400 1000 1500 1.04 1 1 1.04 15 2.5 1000 1400 1000 1500 1.04 1 1 1.04 -904 0 1000 1400 1000 1500 1.04 1 1 1.04 -906 0 1000 1600 1000 1500 1.04 1 1 1.04 -83 2.5 1000 1600 1000 1500 1.04 1 1 1.04 -65.3 2.5 1000 1600 1000 1500 1.04 1 1 1.04 -388 5 1000 1600 1000 1500 1.04 1 1 1.04 -388